February 22, 2017

Advanced MOS Device Physics by Norman G. Einspruch

By Norman G. Einspruch

Contains contributions from a dozen pros from the inner most area and academia. Discusses a number of machine physics themes of specific curiosity to and collage researchers in electric engineering, laptop technology, and digital fabrics. Emphasizes actual description, mode

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The ionic range of boron + 60 A l a n G. Lewis a n d J o h n Y. C h e n is large, even at low implantation energies, and ion channeling plays a significant role even when the target wafers are tilted to minimize this p h e n o m e n o n . 35 |xm [27]. The problem is further c o m p o u n d e d by the high diffusivity of boron. In C M O S technologies, both n- and /7-channel source/drain diffusions must be annealed and activated. A typical anneal used for an arsenic diffusion will cause significant ( > 0 .

Cheng and E. A. Sullivan, Effect of Coulombic scattering on silicon surface mobility. /. Appl. Phys. 45, 187 (1974). Y. C. Cheng and E. A. Sullivan, Surf. Sci. 34, 717 (1973). B. Hofflinger, H. Sibber, and G. Zimmer, Model and performance of hot-electron MOS transistors for VLSI. IEEE Trans. Electron Devices ED-26, 513-520 (1979). A. G. Sabnis and J. T. Clemens, Characterization of electron velocity in the inverted (100) Si surface. Tech. —Int. , pp. 18-21 (1979). 36 19. Ping K. Ko S. C. Sun and J.

Some results are shown in Figs. 15a and <\) 15b [50] versus I with L or t as a parameter. The L and 1/t" {\

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